Influence of orientation on the electro-optic effect in epitaxial Y-doped HfO₂ ferroelectric thin films

Recently, we reported linear electro-optic (EO) effects in (100)-epitaxial yttrium-doped hafnium dioxide (Y-HfO2) ferroelectric thin films. In this study, have investigated the influence of orientation on EO effect Y-HfO2 thin-film. (111)-epitaxial undoped HfO2 and films were deposited Sn-doped In2O3/yttria-stabilized zirconia (111) substrates at room temperature through radiofrequency magnetron sputtering. Although film showed typical paraelectric characteristics, ferroelectricity was observed (111)-Y-HfO2 film. Remnant polarization higher than that (100)-Y-HfO2 The exhibited a based ferroelectricity, which is consistent with average coefficient rc 0.67 pm V−1, This result reasonable considering difference remnant between